VBsemi Electronics Co. Ltd. Transistors FDD6630A-VB

Description
30V 70A 7mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - FDD6630A-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 70A 7mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDD6630A-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDD6630A-VB
Transistors FDD6630A-VB
30V 70A 7mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

30V 70A 7mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDD6630A-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 436324 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBI40N120
Specs
Transistor Type IGBT
View Details
80 V, 1 A PNP medium power transistors - BC53-10PASX - Nexperia B.V.
Nexperia B.V.
80 V, 1 A PNP medium power transistors
BC53-10PASX
Specs
Package Type SOT1061D SOT1061D
View Details
5 suppliers
Single FETs, MOSFETs - 448-AIMBG75R033M2HXTMA1CT-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG75R033M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
920A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E920
Specs
Transistor Type IGBT
View Details