VBsemi Electronics Co. Ltd. Transistors FDD5680-VB

Description
60V 24mΩ@10V 1.8V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - FDD5680-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 24mΩ@10V 1.8V 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDD5680-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDD5680-VB
Transistors FDD5680-VB
60V 24mΩ@10V 1.8V 1 N-Channel TO-252 MOSFETs ROHS

60V 24mΩ@10V 1.8V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDD5680-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 154970P - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
154970P
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT223; SOT-223
View Details
Transimpedance Amplifiers 11.3 Gbps Limiting Transimp Amp DIE - 815-ONET8501TYS - Utmel Electronic Limited
Texas Instruments
Transimpedance Amplifiers 11.3 Gbps Limiting Transimp Amp DIE
ONET8501TYS
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R140M1H - AIMBG75R140M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R140M1H
AIMBG75R140M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details