VBsemi Electronics Co. Ltd. Transistors FDC6305N-VB

Description
20V 4.8A 22mΩ@4.5V,4.8A 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS
  • Transistors - FDC6305N-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
20V 4.8A 22mΩ@4.5V,4.8A 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDC6305N-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDC6305N-VB
Transistors FDC6305N-VB
20V 4.8A 22mΩ@4.5V,4.8A 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS

20V 4.8A 22mΩ@4.5V,4.8A 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDC6305N-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBTs - 1251115 - RS Components, Ltd.
RS Components, Ltd.
IGBTs
1251115
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type Semitrans3
View Details
- LM5101CSD/NOPB - Rochester Electronics
Texas Instruments
LM5101CSD/NOPB
Specs
Transistor Type MOSFET
Package Type WSON10
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R040M1 - AIMBG120R040M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R040M1
AIMBG120R040M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details