Semelab Plc. MOSFET DMD1012

DMD1012 is a silicon DMOS RF FET designed for VHF/UHF communications from 1 MHz to 500 MHz, with a maximum power output of 100 W at 28 V. It features a push-pull configuration and a metal gate with gold metallization, housed in a package measuring 15.24 mm by 10.80 mm with a thermal resistance from junction to case of 0.35°C/W. The device offers a minimum common source power gain of 13 dB and a drain efficiency of 50% at 100 W output. It supports a drain-source breakdown voltage of 70 V and a maximum operating junction temperature of 200°C. The part is RoHS compliant and BeO free, with an input capacitance of 180 pF and output capacitance of 90 pF at 1 MHz. It is rated for load mismatch tolerance up to 20:1 at 500 MHz.