The DMD1010 is a silicon DMOS RF FET designed for VHF/UHF communications and broad band applications, operating up to 500 MHz at 28 V with a maximum output power of 125 W in push-pull configuration. It features a 20 A drain current, 70 V drain-source breakdown voltage, and ±20 V gate-source breakdown voltage. The device has a maximum junction temperature of 200°C and a thermal resistance from junction to case of 0.27°C/W. It is housed in a surface-mount package with dimensions of 15.24 mm by 10.80 mm and is RoHS compliant. The FET exhibits a minimum power gain of 13 dB and a drain efficiency of 50% at 125 W output power and 400 MHz.
MOSFET Silicon DMOS RF FET 150W-28V-500MHz PP
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMD1010 |
| Product Name | MOSFET |
