The 2N3501 is an NPN silicon high voltage planar transistor in a hermetic TO-39 package, designed for signal amplification and switching applications. It has a collector-emitter voltage rating of 150 V, a collector current rating of 300 mA, and a total device dissipation of 1 W at 25 °C. The device features a current gain (hFE) ranging from 75 to 300 depending on collector current, a current-gain bandwidth product of 150 MHz, and a thermal resistance junction-to-ambient of 175 °C/W. Pin configuration is emitter (1), base (2), and collector (3).
Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 Product overview: 2N3501 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 0.3A. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 0.3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3501 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N3501 |
| Product Name | 150V 0.3A Bipolar Transistor |
| IC(max) | 300 milliamps |
