Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3746S 2SC3746S

The 2SC3746 is an NPN epitaxial planar silicon transistor for high-speed switching and power amplification, housed in a TO-220ML package measuring 10.0 mm × 4.5 mm × 7.5 mm. It supports a collector-to-emitter voltage of 60 V, a continuous collector current of 5 A, and a peak collector current of 7 A. Collector dissipation is 20 W at Tc=25°C with a maximum junction temperature of 150°C. The DC current gain ranges from 140 to 280 at IC=1 A and VCE=2 V. The gain-bandwidth product is 100 MHz. Collector-to-emitter saturation voltage is 0.4 V at IC=2.5 A and IB=0.125 A. Turn-on time is 0.1 μs, storage time is 0.5 μs, and fall time is 0.1 μs.