Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays - ULN2803AFW ULN2803AFW

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 387604-ULN2803AFW
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 8 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 18-SOL
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Maximum Power Dissipation: 1.31W
Alternative Parts (Cross-Reference): ULN2803ADWRG4; ULN2803AFW(EL,M); ULN2803AFW(5.EL.M); ULN2803AFW;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Audio, Signal Processing, Industrial, Power Management

TRANS 8NPN DARL 50V 0.5A 18SOL Product overview: ULN2803AFW from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-ULN2803AFW can be used for catalog matching and distributor lookup.