Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M TPCA8102(TE12L,Q,M

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111125-TPCA8102(TE1 2L,Q,M Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 109nC @ 10V Max Input Capacitance: 4600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M - 1111125-TPCA8102(TE12L,Q,M - Win Source Electronics
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111125-TPCA8102(TE1 2L,Q,M Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 109nC @ 10V Max Input Capacitance: 4600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M - 1111125-TPCA8102(TE12L,Q,M - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M
1111125-TPCA8102(TE12L,Q,M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M 1111125-TPCA8102(TE12L,Q,M
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111125-TPCA8102(TE1 2L,Q,M Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 109nC @ 10V Max Input Capacitance: 4600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1111125-TPCA8102(TE12L,Q,M
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP Advance (5x5)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 109nC @ 10V
Max Input Capacitance: 4600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPCA8102(TE12L,Q,M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPCA8102(TE12L,Q,M
MOSFET P-CH 30V 40A 8SOP

MOSFET P-CH 30V 40A 8SOP

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Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1111125-TPCA8102(TE12L,Q,M TPCA8102(TE12L,Q,M
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8102(TE12L,Q,M Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 1600 to 45000 milliwatts
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