Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8129 TPC8129

The TPC8129 is a P-Channel MOSFET designed for applications such as lithium-ion secondary batteries and power management switches. It features a low drain-source on-resistance of 17 m,Ѷ at a gate-source voltage of -10 V, which contributes to efficient power management. The maximum continuous drain current is rated at 9 A, with a drain-source breakdown voltage of -30 V. The device operates within a temperature range of -55¬8C to 150¬8C and has a maximum power dissipation of 1 W. The transistor is packaged in an 8-SOP configuration, making it suitable for surface mount applications. It has a low gate-source threshold voltage ranging from -0.8 V to -2.0 V, and a maximum gate charge of 39 nC at 10 V. The TPC8129 is noted for its small footprint and low leakage current, making it a viable option for compact and efficient electronic designs.