The TPC8129 is a P-Channel MOSFET designed for applications such as lithium-ion secondary batteries and power management switches. It features a low drain-source on-resistance of 17 m,Ѷ at a gate-source voltage of -10 V, which contributes to efficient power management. The maximum continuous drain current is rated at 9 A, with a drain-source breakdown voltage of -30 V. The device operates within a temperature range of -55¬8C to 150¬8C and has a maximum power dissipation of 1 W. The transistor is packaged in an 8-SOP configuration, making it suitable for surface mount applications. It has a low gate-source threshold voltage ranging from -0.8 V to -2.0 V, and a maximum gate charge of 39 nC at 10 V. The TPC8129 is noted for its small footprint and low leakage current, making it a viable option for compact and efficient electronic designs.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056802-TPC8129
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 200μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1650pF @ 10V
Maximum Gate-Source Voltage: +20V, -25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 9A 8SOP Product overview: TPC8129 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8129 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 056802-TPC8129 | 285-TPC8129 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8129 | 30V 9A MOSFET Transistor |
| Polarity | P-Channel; P-Channel | P-Channel |
| V(BR)DSS | 30 volts | |
| PD | 1000 milliwatts | 1000 milliwatts |
