Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8110 TPC8110

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056785-TPC8110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 2180pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056785-TPC8110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 2180pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8110 - 056785-TPC8110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8110
056785-TPC8110
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8110 056785-TPC8110
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056785-TPC8110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 2180pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056785-TPC8110
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2180pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056785-TPC8110
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8110
Polarity P-Channel; P-Channel
V(BR)DSS 40 volts
PD 1000 milliwatts
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