Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6P53D TK6P53D

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212918-TK6P53D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

MOSFET N-CH 525V 6A DPAK-3 Product overview: TK6P53D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 525V, 6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 525V, 6A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK6P53D can be used for catalog matching and distributor lookup.