Toshiba Electronics (UK) Ltd 600V 20A MOSFET Transistor TK20N60W5,S1VF

MOSFET N-CH 600V 20A TO247 Product overview: TK20N60W5,S1VF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK20N60W5,S1VF can be used for catalog matching and distributor lookup.

N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-247

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796834-TK20N60W5,S1VF
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Family Name: TK20N60W5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1800pF @ 300V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 165W (Tc)
Rds On (Maximum) @ Id, Vgs: 175 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SiHG180N60E-GE3; SIHG22N60EF-GE3; SiHG22N60AE-GE3; MMQ60R190PTH;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited