Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK12E60W TK12E60W

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212861-TK12E60W
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: TK12E60W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11.5A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 600μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 890pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 5.8A, 10V
Alternative Parts (Cross-Reference): IXKP13N60C5; R6515KNX1C10; STP17N62K3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

MOSFET N CH 600V 11.5A TO-220 Product overview: TK12E60W from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11.5A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK12E60W can be used for catalog matching and distributor lookup.