Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK068Z65Z5,S1F

Description
N-CH MOSFET 650 V 0.068 OHM TO-2
Request a Quote
Description
N-CH MOSFET 650 V 0.068 OHM TO-2
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The TK068Z65Z5 is an N-channel MOSFET designed for switching voltage regulators, featuring a 650 V drain-source voltage rating and a typical drain-source on-resistance of 0.052 Ω at 10 V gate voltage and 18.5 A drain current. It is housed in a TO-247-4L package with a channel-to-case thermal resistance of 0.462 °C/W and a maximum channel temperature of 150 °C. The device has a reverse recovery time of 135 ns (typical) and a pulsed drain current rating of 148 A. The gate threshold voltage ranges from 3.5 V to 4.5 V, and the device is rated for a single-pulse avalanche energy of 730 mJ.

Datasheet Summary
Powered by GS/AI

The TK068Z65Z5 is an N-channel MOSFET designed for switching voltage regulators, featuring a 650 V drain-source voltage rating and a typical drain-source on-resistance of 0.052 Ω at 10 V gate voltage and 18.5 A drain current. It is housed in a TO-247-4L package with a channel-to-case thermal resistance of 0.462 °C/W and a maximum channel temperature of 150 °C. The device has a reverse recovery time of 135 ns (typical) and a pulsed drain current rating of 148 A. The gate threshold voltage ranges from 3.5 V to 4.5 V, and the device is rated for a single-pulse avalanche energy of 730 mJ.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 264-TK068Z65Z5,S1F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
264-TK068Z65Z5,S1F-ND
Single FETs, MOSFETs 264-TK068Z65Z5,S1F-ND
N-CH MOSFET 650 V 0.068 OHM TO-2

N-CH MOSFET 650 V 0.068 OHM TO-2

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Transistors
Product Number 264-TK068Z65Z5,S1F-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products