Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the QPD2160D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD2160D | 2312-QPD2160D-ND |
| Product Name | DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die | RF FETs, MOSFETs |
| Transistor Type | PHEMT | |
| Transistor Technology / Material | DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die | |
| Transistor Grade / Operating Range | Military |
