Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK042N65Z5,S1F

The TK042N65Z5 is a silicon N-channel MOSFET designed for switching voltage regulators, housed in a TO-247 package. It has a drain-source voltage rating of 650 V, a typical drain-source on-resistance of 0.035 Ω at 10 V gate-source voltage and 27.5 A drain current, and a pulsed drain current rating of 220 A. The device features a reverse recovery time of 160 ns (typical), a total gate charge of 105 nC, and operates with a gate threshold voltage between 3.5 V and 4.5 V. The channel-to-case thermal resistance is 0.347 °C/W, and the maximum channel temperature is 150 °C. The part is rated for single-pulse avalanche energy of 909 mJ and supports a dv/dt ruggedness of 120 V/ns.