Nexperia B.V. 60 V, dual N-channel Trench MOSFET 2N7002AKS-QX

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm × 1.25 mm × 0.95 mm, using Trench MOSFET technology. Each transistor supports a drain-source voltage of 60 V and a gate-source voltage of ±20 V, with a continuous drain current of 220 mA at 25 °C and a drain-source on-state resistance of 2.2 Ω at 10 V gate bias. The device operates with a junction temperature up to 175 °C, is AEC-Q101 qualified, and includes ESD protection with a human body model rating of 500 V.