Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R Product overview: SSM3K335R,LF(T from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM3K335R,LF(T can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 838831-SSM3K335R,LF(
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Balance
Small Low ON resistance MOSFETs
MOSFET, N-CH, 30V, 6A, SOT-23F ROHS COMPLIANT: YES
30V 6A 38mΩ@10V,4A 1W 2.5V@100uA 1 N-Channel SOT-23F MOSFETs ROHS
N-Channel 30V 6A 2.5V @ 100uA 38mΩ @ 4A,10V 1W SOT-23F MOSFET RoHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SSM3K335R,LF(T | 838831-SSM3K335R,LF(T | SSM3K335R,LF(T | 09AK7975 | SSM3K335R,LF(T | 4669-SSM3K335R,LF(T |
| Product Name | 30V 6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3K335R,LF(T | Mosfet, N-Ch, 30V, 6A, Sot-23F Rohs Compliant Toshiba | Transistors | N-Channel 30V 6A 2.5V @ 100uA 38mΩ @ 4A,10V 1W SOT-23F MOSFET RoHS | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | |||||
| PD | 2000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 C (-67 F) |