Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3J325F,LF SSM3J325F,LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 030881-SSM3J325F,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 600mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: S-Mini
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Ta)
Max Gate Charge: 4.6nC @ 4.5V
Max Input Capacitance: 270pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini

P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini

P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini

MOSFET P-CH 20V 2A S-MINI Product overview: SSM3J325F,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM3J325F,LF can be used for catalog matching and distributor lookup.