Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Win Source Part Number: 1113888-RN4985FE,LF(
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Other Names: RN4985FE,LF(CB,RN498
Base Product Number: RN4985
RoHS Status: RoHS non-compliant
NPN + PNP BRT Q1BSR2.2KOHM Q1BER
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | RN4985FELF(CTTR-ND | 1113888-RN4985FE,LF(CT | RN4985FE,LF(CT |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; PNP | NPN; PNP | |
| Package Type | SOT-563, SOT-666 | SOT3 | |
| IC(max) | 100 milliamps | 100 milliamps | |
| Power Gain | 80 dB |
