Rochester Electronics Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B251Y

Description
MX0912B251Y - NPN SILICON RF POW
  • Bipolar RF Transistors - MX0912B251Y - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
MX0912B251Y - NPN SILICON RF POW

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MX0912B251Y
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B251Y
MX0912B251Y - NPN SILICON RF POW

MX0912B251Y - NPN SILICON RF POW

Supplier's Site
Bipolar RF Transistors - MX0912B251Y - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MX0912B251Y
Bipolar RF Transistors MX0912B251Y
MX0912B251Y - NPN SILICON RF POW

MX0912B251Y - NPN SILICON RF POW

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number MX0912B251Y MX0912B251Y
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Packing Method Bulk; Bulk
VCEO 60 volts 60 volts
Output Power 690 watts 690 watts
Polarity NPN; NPN
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