Toshiba Corporation Transistor GT20J301

Description

INSULATED GATE BIPOLAR TRANSISTOR, SILICON N CHANNEL IGBT, 600V 20 A, TO-247VAR. FREE 2 YEAR RADWELL WARRANTY

Radwell International

Description

INSULATED GATE BIPOLAR TRANSISTOR, SILICON N CHANNEL IGBT, 600V 20 A, TO-247VAR. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company

Product

Description

Supplier Links

Radwell International

Willingboro, NJ, United States

Transistor
126269405

Transistor 126269405

INSULATED GATE BIPOLAR TRANSISTOR, SILICON N CHANNEL IGBT, 600V 20 A, TO-247VAR. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

	Radwell International
Product Category	RF Transistors
Product Number	126269405
Product Name	Transistor

Unlock Full Specs

to access all available technical data

Similar Products

Infineon Technologies AG

Single FETs, MOSFETs

AUIRF7737L2TR

Specs

Polarity N-Channel

Package Type DirectFET™ Isometric L6

Transistor Grade / Operating Range Automotive

View Details

4 suppliers

JiuJiang Ingiant Technology Co., Ltd.

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace

View Details

Rochester Electronics

TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E

2SA1052MCTR-E

Specs

Transistor Type Bipolar RF

Package Type SOT3

View Details

Qorvo

DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-05

Specs

Transistor Technology / Material GaN on SiC

Transistor Grade / Operating Range Military

Package Type Die

View Details

4 suppliers