Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3799(Q,M) 2SK3799(Q,M)

Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1204018-2SK3799(Q,M) Packaging: Bulk Drain to Source Voltage (Vdss): 900 V Number of Elements: 1 Input Capacitance: 2.2 nF Power Dissipation: 50 W Number of Pins: 3 Rise Time: 25 ns Fall Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 50 W Max Operating Temperature: 150 °C Continuous Drain Current (ID): 8 A Gate to Source Voltage (Vgs): 30 V Rds On Max: 1.3 Ω