Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037689-2SK2350(Q)
Drain to Source Voltage (Vdss): 200 V
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRF630NPBF; IRFI4020H-117P; IRL630PBF; IRF630PBF; IRFI640GPBF; IRF630NSTRLPBF;
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
RoHS: Compliant
Continuous Drain Current (ID): 8.5 A
Drain to Source Resistance: 400 mΩ
Trans MOSFET N-CH Si 200V 8.5A 3-Pin(3+Tab) TO-220NIS Product overview: 2SK2350(Q) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK2350(Q) can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1037689-2SK2350(Q) | 278-2SK2350(Q) |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2350(Q) | 200V 8.5A MOSFET Transistor |
| rDS(on) | 0.4000 ohms | |
| Package Type | TO-220; SOT3 | |
| MOSFET Operating Mode | Enhancement |
