Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1119 2SK1119

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 091082-2SK1119
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 Ohm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

MOSFET N-CH 1000V 4A TO-220AB Product overview: 2SK1119 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK1119 can be used for catalog matching and distributor lookup.