Toshiba Corporation Transistor 2SD560

Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 32458684 - Radwell International
Willingboro, NJ, United States
Transistor
32458684
Transistor 32458684
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 32458684
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

Interfet -  - Micross Components, Inc.
Micross Components, Inc.
View Details
Single FETs, MOSFETs - AUIRF6215S - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Polarity P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts
View Details
6 suppliers
100 W, DC-3.5 GHz, GaN RF Transistor - QPD2929L - Qorvo
Specs
Transistor Technology / Material 100 W, DC-3.5 GHz, GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details