Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays - 2SA1618-GR 2SA1618-GR

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 117296-2SA1618-GR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP (Dual) Matched Pair, Common Emitter Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SMV Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 117296-2SA1618-GR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP (Dual) Matched Pair, Common Emitter Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SMV Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays - 2SA1618-GR - 117296-2SA1618-GR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - 2SA1618-GR
117296-2SA1618-GR
TRANSISTORS - Transistors (BJT) - Arrays - 2SA1618-GR 117296-2SA1618-GR
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 117296-2SA1618-GR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP (Dual) Matched Pair, Common Emitter Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SMV Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 117296-2SA1618-GR
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: 2 PNP (Dual) Matched Pair, Common Emitter
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SMV
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
50V 0.15A Bipolar Transistor
277-2SA1618-GR
50V 0.15A Bipolar Transistor 277-2SA1618-GR
TRANS 2PNP 50V 0.15A SMV Product overview: 2SA1618-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-2SA1618-GR can be used for catalog matching and distributor lookup.

TRANS 2PNP 50V 0.15A SMV Product overview: 2SA1618-GR from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-2SA1618-GR can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Bipolar RF Transistors
Product Number 117296-2SA1618-GR 277-2SA1618-GR
Product Name TRANSISTORS - Transistors (BJT) - Arrays - 2SA1618-GR 50V 0.15A Bipolar Transistor
Polarity PNP; 2 PNP (Dual) Matched Pair, Common Emitter PNP
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