The TPS2815D is a dual 2-input NAND gate MOSFET driver with 2-A peak output current and a 4-V to 14-V supply voltage range, designed for high-speed switching into capacitive loads. It operates over an ambient temperature range of −40°C to 125°C and is packaged in an 8-pin SOIC. The device consumes 5 µA supply current regardless of input state and achieves 25-ns max rise and fall times with a 1-nF load. Propagation delay is specified under standard test conditions with a 14-V supply. It does not include an internal regulator, distinguishing it from the TPS2811, TPS2812, and TPS2813 variants. Maximum power dissipation at 25°C is 730 mW for the D package, with derating of 5.84 mW/°C above 25°C.
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TPS2815D |
| Package Type | SOIC8 |