Texas Instruments High-Performance Analog TPS2815D

Description
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8
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Description
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8
Request a Quote
Datasheet
Datasheet Summary
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The TPS2815D is a dual 2-input NAND gate MOSFET driver with 2-A peak output current and a 4-V to 14-V supply voltage range, designed for high-speed switching into capacitive loads. It operates over an ambient temperature range of −40°C to 125°C and is packaged in an 8-pin SOIC. The device consumes 5 µA supply current regardless of input state and achieves 25-ns max rise and fall times with a 1-nF load. Propagation delay is specified under standard test conditions with a 14-V supply. It does not include an internal regulator, distinguishing it from the TPS2811, TPS2812, and TPS2813 variants. Maximum power dissipation at 25°C is 730 mW for the D package, with derating of 5.84 mW/°C above 25°C.

Datasheet Summary
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The TPS2815D is a dual 2-input NAND gate MOSFET driver with 2-A peak output current and a 4-V to 14-V supply voltage range, designed for high-speed switching into capacitive loads. It operates over an ambient temperature range of −40°C to 125°C and is packaged in an 8-pin SOIC. The device consumes 5 µA supply current regardless of input state and achieves 25-ns max rise and fall times with a 1-nF load. Propagation delay is specified under standard test conditions with a 14-V supply. It does not include an internal regulator, distinguishing it from the TPS2811, TPS2812, and TPS2813 variants. Maximum power dissipation at 25°C is 730 mW for the D package, with derating of 5.84 mW/°C above 25°C.

Suppliers

Company
Product
Description
Supplier Links
 - TPS2815D - Rochester Electronics
Newburyport, MA, United States
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8

NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPS2815D
Package Type SOIC8
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