Taizhou Electronics Co., Ltd. Transistors TPM2009EP3

Description
20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS
Datasheet
Description
20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors - TPM2009EP3 - ODG (Origin Data Global)
Shenzhen, China
Transistors
TPM2009EP3
Transistors TPM2009EP3
20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS

20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
TPM2009EP3
Triode/MOS Tube/Transistor >> MOSFETs TPM2009EP3
20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA P Channel DFN1006-3L MOSFETs ROHS

20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA P Channel DFN1006-3L MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPM2009EP3 TPM2009EP3
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
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