Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC550C B1G

NPN silicon transistor for switching and amplification, housed in a TO-92 package, with a collector-base voltage of 50 V, collector-emitter voltage of 45 V, emitter-base voltage of 6 V, collector current of 100 mA, and power dissipation of 500 mW. The device features a DC current gain range of 420 to 800, operates within a junction temperature range of -65°C to 150°C, and meets UL 94 V-0 flammability and JESD 201 class 1A whisker test requirements. It is RoHS compliant and marked with a green compound. The part is suitable for SMPS, adapters, lighting, and DC/DC converters.