Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC547B A1G

Description
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92
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Datasheet
Datasheet Summary
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NPN silicon transistor for switching and amplification, packaged in TO-92 with a power dissipation of 500mW and a collector-emitter voltage rating of 45V. Collector current is rated at 100mA, with a minimum DC current gain (hFE) of 200 and maximum of 450 for the B group. The device is RoHS compliant, has a junction temperature range of -65°C to +150°C, and meets UL 94 V-0 flammability and JESD 201 class 1A whisker test standards.

Datasheet Summary
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NPN silicon transistor for switching and amplification, packaged in TO-92 with a power dissipation of 500mW and a collector-emitter voltage rating of 45V. Collector current is rated at 100mA, with a minimum DC current gain (hFE) of 200 and maximum of 450 for the B group. The device is RoHS compliant, has a junction temperature range of -65°C to +150°C, and meets UL 94 V-0 flammability and JESD 201 class 1A whisker test standards.

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Single Bipolar Transistors - BC547BA1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC547BA1G-ND
Single Bipolar Transistors BC547BA1G-ND
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC547BA1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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