Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC337-16 B1G

NPN silicon transistor for switching and audio frequency amplifier applications, housed in a TO-92 plastic package measuring 4.30 to 5.10 mm in width and 12.50 to 14.50 mm in height, with a weight of approximately 190 mg. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 45 V, emitter-base voltage of 5 V, and a continuous collector current of 800 mA, with a power dissipation of 625 mW. The device operates over a junction and storage temperature range of -55°C to +150°C, features a transition frequency of 100 MHz, and has current gain (hFE) grouped between 100 and 250 for the -16 variant. It is RoHS compliant and uses a green, halogen-free compound. The part meets AEC-Q200 and MIL-STD-202 standards for reliability and solderability.