Taiwan Semiconductor Manufacturing Company, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM2NB60CH C5G TSM2NB60CH C5G

Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114734-TSM2NB60CH C5G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251 (IPAK) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 9.4nC @ 10V Max Input Capacitance: 249pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 75