Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
MOSFET N-CH 40V 48A LFPAK33
BUK7M12-40E - N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK33 Product overview: BUK7M12-40EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7M12-40EX can be used for catalog matching and distributor lookup.
N-Channel 40V 48A (Tc) 55W (Tc) Surface Mount LFPAK33
N-Channel 40V 48A (Tc) 55W (Tc) Surface Mount LFPAK33
N-Channel 40V 48A (Tc) 55W (Tc) Surface Mount LFPAK33
Win Source Part Number: 960069-BUK7M12-40EX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 55W (Tc)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD50N04S410ATMA1; IPD50N04S309ATMA1; NTDV5805NT4G; IPD088N04LGBTMA1; BUK9M14-40EX; FDD8880;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934070085115,568-130
Base Product Number: BUK7M12
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, AUTO, 48A, 40V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 40V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 48A LFPAK33
MOSFET BUK7M12-40E/MLFPAK/R
MOSFET N-CH 40V MLFPAK
| Nexperia B.V. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7M12-40EX | BUK7M12-40EX | 278-BUK7M12-40EX | 1727-2556-1-ND | 960069-BUK7M12-40EX | 17AC9435 | BUK7M12-40EX | BUK7M12-40EX | 554-BUK7M12-40EX |
| Product Name | N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK33 | Single FETs, MOSFETs | N-Channel 40 V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, Auto, 48A, 40V, Sot1210; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 40V MLFPAK |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| Package Type | SOT1210 | SOT-1210, 8-LFPAK33 (5-Lead) | SOT-1210, 8-LFPAK33 (5-Lead) | SOT3 | TO-3 | Surface Mount | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 40 volts | 40 volts |