Taiwan Semiconductor Manufacturing Company, Ltd. Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays TSM2537CQ

Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Taiwan Semiconductor Corporation Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Package: Tape & Reel (TR) Product Status: Active Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
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Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Taiwan Semiconductor Corporation Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Package: Tape & Reel (TR) Product Status: Active Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Alternative Parts (Cross-Reference): Cross Manufacturer: Taiwan Semiconductor Corporation Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays Package: Tape & Reel (TR) Product Status: Active Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)

Alternative Parts (Cross-Reference): Cross
Manufacturer: Taiwan Semiconductor Corporation
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Package: Tape & Reel (TR)
Product Status: Active
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)

Buy Now Datasheet
FET, MOSFET Arrays - TSM2537CQ - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
TSM2537CQ
FET, MOSFET Arrays TSM2537CQ
-20V, -9A, COMPLEMENTARY P-CHANN

-20V, -9A, COMPLEMENTARY P-CHANN

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TSM2537CQ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TSM2537CQ
MOSFET N/P-CH 20V 11.6A/9A 6TDFN

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TSM2537CQ TSM2537CQ
Product Name Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; N and P-Channel
Package Type SOT3 6-VDFN Exposed Pad
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts
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