Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET TSM1NB60CP ROG

N-channel power MOSFET designed for power supply, lighting, and charger applications, housed in a TO-252 (DPAK) package, with a drain-source voltage rating of 600 V, continuous drain current of 1 A at 25°C, and on-state resistance of up to 10 Ω. It has a total gate charge of 6.1 nC, input capacitance of 138 pF, and single-pulsed avalanche energy of 5 mJ. The device is rated for junction and storage temperatures from -55°C to +150°C, with junction-to-ambient thermal resistance of 60 °C/W on FR-4 PCB in still air. The part is RoHS compliant and halogen-free.