STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - W28NK60Z W28NK60Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054238-W28NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 150μA Max Gate Charge: 264nC @ 10V Max Input Capacitance: 6350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 185 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 054238-W28NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 150μA Max Gate Charge: 264nC @ 10V Max Input Capacitance: 6350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 185 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - W28NK60Z - 054238-W28NK60Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - W28NK60Z
054238-W28NK60Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - W28NK60Z 054238-W28NK60Z
Manufacturer: STMicroelectronics Win Source Part Number: 054238-W28NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 150μA Max Gate Charge: 264nC @ 10V Max Input Capacitance: 6350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 185 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054238-W28NK60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 150μA
Max Gate Charge: 264nC @ 10V
Max Input Capacitance: 6350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 185 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 054238-W28NK60Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - W28NK60Z
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 350000 milliwatts
Unlock Full Specs
to access all available technical data