N-Channel 600V 72A (Tc) 446W (Tc) Through Hole TO-247 Long Leads
N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long leads package Product overview: STWA75N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 32 mOhm, 72 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 32 mOhm, 72 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STWA75N60M6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1324127-STWA75N60M6
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 446W (Tc)
Supplier Device Package: TO-247 Long Leads
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-STWA75N60M6,497-
Base Product Number: STWA75
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 600V 72A TO247
MOSFET, N-CH, 600V, 72A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-STWA75N60M6-ND | 278-STWA75N60M6 | 1324127-STWA75N60M6 | STWA75N60M6 | STWA75N60M6 | 99AC9652 |
| Product Name | Single FETs, MOSFETs | N-Channel 600 V 32 mOhm 72 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 72A, To-247; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| PD | 446000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
