STMicroelectronics, Inc. Transistor STW8NB100

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 7.3A I(D), 1000V, 1.45OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

N-Channel 1000V 7.3A (Tc) 190W (Tc) Through Hole TO-247-3

Manufacturer: STMicroelectronics
Win Source Part Number: 1104066-STW8NB100
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STW8NB100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.45 Ohm @ 3.6A, 10V
Alternative Parts (Cross-Reference): APT1001R1BN; TSM9N90CN C0; APT1001R3BN; IXFR14N100Q2; APT9M100B; STW7NA100; STW12NK95Z;
Introduction Date: March 15, 1999
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance