STMicroelectronics, Inc. FETs - Single - STW32NM50N STW32NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262358-STW32NM50N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262358-STW32NM50N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STW32NM50N - 1262358-STW32NM50N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW32NM50N
1262358-STW32NM50N
FETs - Single - STW32NM50N 1262358-STW32NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 1262358-STW32NM50N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262358-STW32NM50N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V

Buy Now
Single FETs, MOSFETs - STW32NM50N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW32NM50N
Single FETs, MOSFETs STW32NM50N
MOSFET N CH 500V 22A TO-247

MOSFET N CH 500V 22A TO-247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13284-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13284-5-ND
Single FETs, MOSFETs 497-13284-5-ND
N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore
500V 22A MOSFET Transistor
278-STW32NM50N
500V 22A MOSFET Transistor 278-STW32NM50N
500V 22A N-CH Power MOSFET TO-247 Product overview: STW32NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW32NM50N can be used for catalog matching and distributor lookup.

500V 22A N-CH Power MOSFET TO-247 Product overview: STW32NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW32NM50N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW32NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW32NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW32NM50N
MOSFET N CH 500V 22A TO-247

MOSFET N CH 500V 22A TO-247

Supplier's Site
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7786 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics
45AC7786
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics 45AC7786
MOSFET, N-CH, 500V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET

MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1262358-STW32NM50N STW32NM50N 497-13284-5-ND 278-STW32NM50N STW32NM50N 45AC7786 STW32NM50N
Product Name FETs - Single - STW32NM50N Single FETs, MOSFETs Single FETs, MOSFETs 500V 22A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
QG 62.5 nC
PD 190000 milliwatts 190000 milliwatts 190000 milliwatts
TJ 150 C (302 F) 150 C (302 F) -55 C (-67 F)
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