STMicroelectronics, Inc. Single FETs, MOSFETs STW32NM50N

Description
N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3
  • Single FETs, MOSFETs - 497-13284-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STW32NM50N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - STW32NM50N - 1262358-STW32NM50N - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7786 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW32NM50N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13284-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13284-5-ND
Single FETs, MOSFETs 497-13284-5-ND
N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 500V 22A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW32NM50N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW32NM50N
Single FETs, MOSFETs STW32NM50N
MOSFET N CH 500V 22A TO-247

MOSFET N CH 500V 22A TO-247

Supplier's Site Datasheet
FETs - Single - STW32NM50N - 1262358-STW32NM50N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW32NM50N
1262358-STW32NM50N
FETs - Single - STW32NM50N 1262358-STW32NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 1262358-STW32NM50N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262358-STW32NM50N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 130mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 62.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1973pF at 50V

Buy Now
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7786 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics
45AC7786
Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics 45AC7786
MOSFET, N-CH, 500V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW32NM50N
MOSFET STW32NM50N
MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET

MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW32NM50N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW32NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW32NM50N
MOSFET N CH 500V 22A TO-247

MOSFET N CH 500V 22A TO-247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13284-5-ND STW32NM50N 1262358-STW32NM50N 45AC7786 STW32NM50N STW32NM50N
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - STW32NM50N Mosfet, N-Ch, 500V, 22A, To-247; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-220; TO-247; SOT3 TO-3; TO-247 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 22000 milliamps 22000 milliamps
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