The CSD17576Q5BT is a 30 V N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (5 mm × 6 mm) plastic package, optimized for synchronous buck converter applications. It has a maximum drain-to-source voltage of 30 V, a gate-to-source voltage rating of ±20 V, and a continuous drain current of 184 A (silicon limited) at TC=25°C. The on-resistance is 1.7 mΩ at VGS=10 V and 2.4 mΩ at VGS=4.5 V, with a total gate charge of 25 nC at 4.5 V. The device is avalanche rated with 115 mJ single-pulse energy and has a junction temperature range of -55°C to 150°C. It is RoHS compliant, halogen free, and supplied in a 7-inch reel packing format.
CSD17576Q5B, 30-V N-Cannel NexFET? Power MOSFET 8-VSON-CLIP
30V, N ch NexFET MOSFET™, single SON5x6, 2.9mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD17576Q5BT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.9mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.9mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17576Q5BT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771864-CSD17576Q5BT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-VSON-CLIP (5x6)
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 1.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 4430pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 2 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): NTMFS4C03NT1G; CSD17576Q5BT; CSD17576Q5B; RS1E300GNTB;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
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| Texas Instruments | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17576Q5BT | 278-CSD17576Q5BT | 771864-CSD17576Q5BT | 296-CSD17576Q5BTDKR-ND | CSD17576Q5BT | CSD17576Q5BT |
| Product Name | CSD17576Q5B CSD17576Q5B, 30-V N-Cannel NexFET? Power MOSFET | 30V 2.9mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17576Q5BT | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| V(BR)DSS | 30 volts | |||||
| rDS(on) | 0.0029 ohms | |||||
| IDSS | 400000 milliamps | |||||
| QG | 25 nC | 32 nC | ||||
| Package Type | SON5x6 | SOT3 | 8-PowerTDFN | 8-PowerTDFN |
