STMicroelectronics, Inc. Single FETs, MOSFETs STW200NF03

Description
N-Channel 30V 120A (Tc) 350W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 30V 120A (Tc) 350W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - STW200NF03-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STW200NF03-ND
Single FETs, MOSFETs STW200NF03-ND
N-Channel 30V 120A (Tc) 350W (Tc) Through Hole TO-247-3

N-Channel 30V 120A (Tc) 350W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW200NF03 - 1104032-STW200NF03 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW200NF03
1104032-STW200NF03
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW200NF03 1104032-STW200NF03
Manufacturer: STMicroelectronics Win Source Part Number: 1104032-STW200NF03 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 280nC @ 10V Max Input Capacitance: 10000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104032-STW200NF03
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 280nC @ 10V
Max Input Capacitance: 10000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW200NF03 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW200NF03
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW200NF03
MOSFET N-CH 30V 120A TO247-3

MOSFET N-CH 30V 120A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STW200NF03-ND 1104032-STW200NF03 STW200NF03
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW200NF03 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
V(BR)DSS 30 volts
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