Manufacturer: STMicroelectronics
Win Source Part Number: 088551-STW11NM80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: STW11NM80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 43.6nC @ 10V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IXFX32N80P; APT8030B2VFR; IXFK34N80SN;
Introduction Date: March 23, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
800V 11A N-CH MOSFET TO-247 400mR RdsOn Product overview: STW11NM80 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW11NM80 can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 088551-STW11NM80 | 278-STW11NM80 | 497-4420-5-ND | 7609768 | 7609768P | STW11NM80 | STW11NM80 | STW11NM80 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NM80 | 800V 11A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | ||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | |||||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 |
