STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NE10L-AP STQ1NE10L-AP

Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097251-STQ1NE10L-AP Drain to Source Voltage (Vdss): 100 V Rise Time: 12 ns Fall Time: 13 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STQ1NE10L-APSTQ1NE10 LAP; Popularity: Low Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 11 ns Continuous Drain Current (ID): 1 A Turn-Off Delay Time: 20 ns Drain to Source Resistance: 400 mΩ Gate to Source Voltage (Vgs): 16 V