STMicroelectronics, Inc. Single FETs, MOSFETs STQ1HN60K3-AP

Description
N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
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Description
N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13784-3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13784-3-ND
Single FETs, MOSFETs 497-13784-3-ND
N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

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Singapore
Through-Hole 600V 6.7 Ohm MOSFET Transistor
278-STQ1HN60K3-AP
Through-Hole 600V 6.7 Ohm MOSFET Transistor 278-STQ1HN60K3-AP
600V N-CH Power MOSFET, 6.7 Ohm, TO-92, Through Hole Product overview: STQ1HN60K3-AP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 6.7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 600V, 6.7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STQ1HN60K3-AP can be used for catalog matching and distributor lookup.

600V N-CH Power MOSFET, 6.7 Ohm, TO-92, Through Hole Product overview: STQ1HN60K3-AP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 6.7 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 600V, 6.7 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STQ1HN60K3-AP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1154003-STQ1HN60K3-AP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1154003-STQ1HN60K3-AP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1154003-STQ1HN60K3-AP
Win Source Part Number: 1154003-STQ1HN60K3-A P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH3™ Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 3W (Tc) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3 Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STQ1HN60K3AP; ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13784-3,-497-13 784-1,497-13784-1,49 7-13784-3 Base Product Number: STQ1 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1154003-STQ1HN60K3-AP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperMESH3™
Package: Cut Tape (CT),Tape & Box (TB)
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 3W (Tc)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STQ1HN60K3AP;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-13784-3,-497-13784-1,497-13784-1,497-13784-3
Base Product Number: STQ1
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STQ1HN60K3-AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STQ1HN60K3-AP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STQ1HN60K3-AP
MOSFET N-CH 600V 400MA TO92-3

MOSFET N-CH 600V 400MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13784-3-ND 278-STQ1HN60K3-AP 1154003-STQ1HN60K3-AP STQ1HN60K3-AP STQ1HN60K3-AP
Product Name Single FETs, MOSFETs Through-Hole 600V 6.7 Ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
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