STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM50N STP8NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 136379-STP8NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 364pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 790 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 136379-STP8NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 364pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 790 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM50N - 136379-STP8NM50N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM50N
136379-STP8NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM50N 136379-STP8NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 136379-STP8NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 364pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 790 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 136379-STP8NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 364pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 790 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP8NM50N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP8NM50N
Single FETs, MOSFETs STP8NM50N
MOSFET N-CH 500V 5A TO220AB

MOSFET N-CH 500V 5A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10965-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10965-5-ND
Single FETs, MOSFETs 497-10965-5-ND
N-Channel 500V 5A (Tc) 45W (Tc) Through Hole TO-220

N-Channel 500V 5A (Tc) 45W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO

MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO

Buy Now Datasheet
Mosfet, N Ch, 500V, 5A, To-220; Channel Type Stmicroelectronics - 21T4042 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 500V, 5A, To-220; Channel Type Stmicroelectronics
21T4042
Mosfet, N Ch, 500V, 5A, To-220; Channel Type Stmicroelectronics 21T4042
MOSFET, N CH, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET, N CH, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP8NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP8NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP8NM50N
MOSFET N-CH 500V 5A TO220AB

MOSFET N-CH 500V 5A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 136379-STP8NM50N STP8NM50N 497-10965-5-ND STP8NM50N 21T4042 STP8NM50N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM50N Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Ch, 500V, 5A, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 45000 milliwatts 45000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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