N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package Product overview: STP6N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.3 Ohm, 4.5 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.3 Ohm, 4.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP6N80K5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261777-STP6N80K5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 4.5A
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V
Gate Source Voltage (Maximum): 30V
Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V
MOSFET N-CH 800V 4.5A TO220
N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole TO-220
MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in TO-220 package
MOSFET, N-CH, 800V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 800V 4.5A TO220
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STP6N80K5 | 1261777-STP6N80K5 | STP6N80K5 | 497-15018-5-ND | STP6N80K5 | 45AC7730 | STP6N80K5 |
| Product Name | N-Channel 800 V 1.3 Ohm 4.5 A MOSFET Transistor | FETs - Single - STP6N80K5 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 4.5A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 85000 milliwatts | 85000 milliwatts | 85000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 800 volts | 800 volts |
