STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N65M2 STP33N65M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261723-STP33N65M2 Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STP33N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1790pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): IPP60R099CPAAKSA1; IPP60R099CPAXK; IPP60R099CPA; Introduction Date: December 10, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261723-STP33N65M2 Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STP33N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1790pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): IPP60R099CPAAKSA1; IPP60R099CPAXK; IPP60R099CPA; Introduction Date: December 10, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N65M2 - 1261723-STP33N65M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N65M2
1261723-STP33N65M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N65M2 1261723-STP33N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261723-STP33N65M2 Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STP33N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1790pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): IPP60R099CPAAKSA1; IPP60R099CPAXK; IPP60R099CPA; Introduction Date: December 10, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261723-STP33N65M2
Series: MDmesh M2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STP33N65M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 41.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1790pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IPP60R099CPAAKSA1; IPP60R099CPAXK; IPP60R099CPA;
Introduction Date: December 10, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP33N65M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP33N65M2
Single FETs, MOSFETs STP33N65M2
MOSFET N-CH 650V 24A TO220

MOSFET N-CH 650V 24A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15560-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15560-5-ND
Single FETs, MOSFETs 497-15560-5-ND
N-Channel 650V 24A (Tc) 190W (Tc) Through Hole TO-220

N-Channel 650V 24A (Tc) 190W (Tc) Through Hole TO-220

Buy Now Datasheet
Singapore
N-Channel 650 V 0.117 Ohm 24 A MOSFET Transistor
278-STP33N65M2
N-Channel 650 V 0.117 Ohm 24 A MOSFET Transistor 278-STP33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package Product overview: STP33N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.117 Ohm, 24 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.117 Ohm, 24 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP33N65M2 can be used for catalog matching and distributor lookup.

N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package Product overview: STP33N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.117 Ohm, 24 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.117 Ohm, 24 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP33N65M2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP33N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP33N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP33N65M2
MOSFET N-CH 650V 24A TO220

MOSFET N-CH 650V 24A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package

MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1261723-STP33N65M2 STP33N65M2 497-15560-5-ND 278-STP33N65M2 STP33N65M2 STP33N65M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N65M2 Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 650 V 0.117 Ohm 24 A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
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