STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM50N STP23NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 053925-STP23NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP23NM50N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Formed Leads Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1330pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): IPP50R199CPHKSA1; SPP21N50C3XK; IPP50R250CPXK; IPP50R140CPXK; Introduction Date: December 11, 2009 ECCN: EAR99 Country of Origin: China, Italy, Morocco, Philippines, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 053925-STP23NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP23NM50N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Formed Leads Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1330pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): IPP50R199CPHKSA1; SPP21N50C3XK; IPP50R250CPXK; IPP50R140CPXK; Introduction Date: December 11, 2009 ECCN: EAR99 Country of Origin: China, Italy, Morocco, Philippines, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM50N - 053925-STP23NM50N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM50N
053925-STP23NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM50N 053925-STP23NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 053925-STP23NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STP23NM50N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Formed Leads Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1330pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): IPP50R199CPHKSA1; SPP21N50C3XK; IPP50R250CPXK; IPP50R140CPXK; Introduction Date: December 11, 2009 ECCN: EAR99 Country of Origin: China, Italy, Morocco, Philippines, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 053925-STP23NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: STP23NM50N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Formed Leads
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1330pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): IPP50R199CPHKSA1; SPP21N50C3XK; IPP50R250CPXK; IPP50R140CPXK;
Introduction Date: December 11, 2009
ECCN: EAR99
Country of Origin: China, Italy, Morocco, Philippines, Singapore
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
500V 17A TO-220 MOSFET Transistor
278-STP23NM50N
500V 17A TO-220 MOSFET Transistor 278-STP23NM50N
500V N-CH MOSFET, 17A, 162mR RdsOn, TO-220 Product overview: STP23NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 17A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 17A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP23NM50N can be used for catalog matching and distributor lookup.

500V N-CH MOSFET, 17A, 162mR RdsOn, TO-220 Product overview: STP23NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 17A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 17A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP23NM50N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STP23NM50N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP23NM50N
Single FETs, MOSFETs STP23NM50N
MOSFET N-CH 500V 17A TO220-3

MOSFET N-CH 500V 17A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10883-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10883-5-ND
Single FETs, MOSFETs 497-10883-5-ND
N-Channel 500V 17A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 500V 17A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch

MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch

Buy Now Datasheet
Mosfet, N Ch, 500V, 17A, To-220; Channel Type Stmicroelectronics - 21T4039 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 500V, 17A, To-220; Channel Type Stmicroelectronics
21T4039
Mosfet, N Ch, 500V, 17A, To-220; Channel Type Stmicroelectronics 21T4039
MOSFET, N CH, 500V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 500V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP23NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP23NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP23NM50N
MOSFET N-CH 500V 17A TO220-3

MOSFET N-CH 500V 17A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 053925-STP23NM50N 278-STP23NM50N STP23NM50N 497-10883-5-ND STP23NM50N 21T4039 STP23NM50N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM50N 500V 17A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Ch, 500V, 17A, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 125000 milliwatts 125000 milliwatts 125000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
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